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| PNP Silicon Switching Transistor High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q SXT 3906 Type SXT 3906 Marking 2A Ordering Code (tape and reel) Q68000-A8397 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 100 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 40 5 200 1 150 - 65 ... + 150 Unit V mA W C 120 50 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 3906 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 30 V Collector-emitter cutoff current VCE = 30 V, VBE = - 3 V DC current gain IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 ICEV hFE 60 80 100 60 30 VCEsat - - VBEsat 0.65 - - - 0.85 0.95 - - 0.25 0.4 - - - - - - - 300 - - V 40 40 5 - - - - - - - - - - 50 50 - nA V Values typ. max. Unit 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SXT 3906 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Input impedance ICE = 1 mA, VCE = 10 V, f = 1 kHz Voltage feedback ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Small-signal current gain IC = 1 mA, VCE = 10 V, f = 1 kHz Output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 k Switching times VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA VCC = 3 V, IC = 10 mA, IB1 = 1 mA fT Cobo Cibo hie hre hfe hoe NF 250 - - 2 0.1 100 3 - - - - - - - - - - 4.5 10 12 10 400 60 4 k 10- 4 - S Values typ. max. Unit MHz pF dB td tr ts tf - - - - - - - - 35 35 225 75 ns ns ns ns Semiconductor Group 3 SXT 3906 Test circuits Delay and rise time Storage and fall time Semiconductor Group 4 SXT 3906 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max/Ptot DC = f (tp) Open-circuit reverse voltage transfer ratio h12e = f (IC) Semiconductor Group 5 SXT 3906 Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz Output admittance h22e = f (IC) VCE = 10 V, f = 1 MHz Delay time td = f (IC) Rise time tr = f (IC) Fall time tf = f (IC) Semiconductor Group 6 SXT 3906 DC current gain hFE = f (IC) VCE = 1 V, normalized Semiconductor Group 7 |
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